semiconductor rohs rohs nkt160a/nkh160a series thyristor diode and thyristor thyristor, 160a / / ( - - ) new int a pak power modules features ? high voltage ? ( electrically isolated by dbc ceramic ai 2 3 o ) ? 3500 v rms isolating voltage ? industrial standard package ? high surge capability ? glass passivated chips ? / modules uses high voltage power thyristor diodes in two basic configurations ? simple mounting ? ul approved file e320098 ? compliant to rohs ? designed and qualified for multiple level applications ? dc motor control and drives ? battery charges ? welders ? power converters ? lighting control ? heat and temperature control major ratings and characteristics symbol characteristics i t av ( ) 85 c i t rms ( ) a i tsm 50 hz 60 hz i t 2 50 hz ka 2 s 60 hz i 2 t range t j range k1 g1 k1 g1 nkt nkh + + product summary i t av ( ) 160 a new int a pak - - 85 c units value a ka s 2 c v 160 251 5400 5670 146 133 1458 400 to 1600 -40 to 125 n high power products ell page 1 of 4 all dimensions in millimeters 29+1 36+2 - - 24 23 12+1 34+2 23 2.8x0.8+0.1 15+1 80+1 94+1 - - k 2 g 2 v drm rrm / v 2??6.5 3-m6 screws ~ + ~ + ~ ~ 0.8 7+0.5 9 www.nellsemi.com
page 2 of 4 semiconductor rohs rohs forward conduction parameter symbol test conditions maximum average on-state current at case temperature i t av ( ) 180 , conduction half sine wave ,50hz maximum rms on state current - a maximum peak one cycle, , - on state - - non repetitive surge current i tsm t ms = 10 no voltage reapplied sine half wave, initial t j = t j maximum t ms = 8.3 maximum i 2 t for fusing i 2 t ka 2 s maximum i 2 t for fusing i 2 t t ms to ms no = 0.1 10 , voltage reapplied maximum on state voltage drop - v tm i tm = 480a , t j = 25 , 180 c conduction maximum forward voltage drop v fm i fm = 480a, t j = 25 , 180 c conduction maximum holding current i h anode supply v initial i = 6 t = 30 ,a t j = 25 c ma maximum latching current i l anode supply v resistive load = 6 = 1 gate pulse v s t : 10 , 100 ! , j = 25 c 400 blocking parameter symbol test conditions values maximum peak reverse and off state leakage current - i rrm , i drm t j = 125 c rms isolation voltage v iso 50 , , hz circuit to base all terminals shorted v critical rate of rise of off state voltage - dv dt / t j = t j , maximum exponential to rated v 67 % drm / ! v s v units electrical specifications voltage ratings type number voltage code v rrm / v drm , maximum repetitive peak reverse voltage v v rsm / v dsm , - maximum non repetitive peak reverse voltage v i rrm / i drm at c 125 ma nkt160 04 400 500 20 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 180 , conduction half sine wave ,50hz ,t = 85 c c value 40~150 1.4 1.7 1458 251 5400 160 85 5670 a c 146 133 20 800 ma n high power products ell t ms = 10 t ms = 8.3 t ms = 10 t ms = 8.3 ka 2 s 102 93 reapplied 100%v rrm 2500 (1min) 3500 (1s) units nkt160a/nkh160a series nkh160 l t(rms) www.nellsemi.com
semiconductor rohs rohs triggering parameter symbol test conditions values units maximum peak gate power p gm t p 5 , ms t j = t j 10 maximum w maximum average gate power p g av ( ) f hz t = 50 , j = t j 3 maximum maximum peak gate current i gm t p 5 , ms t j = t j maximum 3 a maximum peak negative gate voltage - v gt 10 v gate voltage v gt anode supply v = 6 , resistive load r ; a = 1 t j = 25 c i gt ma maximum gate voltage that will not trigger v gd t j = t j , maximum 66.7% v drm applied 0.25 maximum gate current that will not trigger i gd 10 ma maximum rate of rise of turned on current - di dt / t j = 25 oc ,i = 1.5a ,t 0.5 s gm r 150 / ! a s thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating temperature range t j - 40 125 to c maximum storage temperature range t stg - 40 150 to maximum thermal resistance, junction to ca se per junction r thjc dc operation c/w maximum thermal resistance, case to heatsink per module r thcs mounting surface smooth , , flat and greased mounting torque 10 % iap to heatsink , m6 a mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. lubricated threads. 4 6 to n.m busbar to iap , m6 approximate weight 220 7.05 case style new int a pak - - triggering j j j = t j j j - v gt maximum required dc to trigger a maximum required dc gate current to trigger = t c thcs ? 0.7~1.8 30~150 v oz. g 0.055 n high power products ell page 3 of 4 nkt160a/nkh160a series 0.17 www.nellsemi.com ordering information table 1 - moduletype:nkt for(thyristor+ thyristor)module 2 3 - : currentratingi t av ( ) 4 - 100 = voltagecodex v rrm device code nkt a 4 - assemblytype, a forsolderingtype 16 160 / 3 2 1 nkhfor(thyristor+diode)module
page 4 of 4 semiconductor rohs rohs n high power products ell fig.1 on-state current vs. voltage characteristic fig.2 transient thermal impedance(junction-case) fig.3 power consumption vs. average current fig.4 case temperature vs. on-state average current fig.5 on-state surge current vs cycles fig.6 gate characteristics on-state peak voltage (v) transient thermal impedance ( c/w) maximum power consumption (w) ase temperature ( c) on-state surge current (ka) gate voltage (v) t = 125 c j 5 4.3 3.6 2.9 2.2 100 1000 10000 0.18 0.15 0.09 0.06 0.03 0.00 0.001 0.01 0.1 1 10 140 120 100 80 60 40 20 0 0 50 100 150 200 250 30 60 90 120 180 conduction angle 0 180 30 60 90 120 180 conduction angle 400 350 300 250 150 100 50 0 0 50 100 150 200 6 5 4 3 2 1 1 10 100 cycles @50hz gate current (ma) on-state current (a) time (s) on-state average current (a) on-state average current (a) maximum gate voltage that will not trigger any unit 125 c 25 c -30 c peak forward gate voltage (10v) 2 10 1 5 2 10 0 5 2 10 -1 2 10 1 5 2 10 2 5 2 10 3 5 peak gate current (3a) peak gate power (10w) average gate power (3w) 1.5 0.8 0.12 200 0 180 300 nkt160a/nkh160a series www.nellsemi.com
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